Infineon IRL2203NPBF
$ 0.944
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +51.03%
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Questo componente
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Price @ 1000
$ 0.944
$ 1.05
Stock
1,885,005
60,294
Authorized Distributors
3
3
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
1 V
1 V
Rds On Max
7 mΩ
7 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
130 W
180 W
Input Capacitance
3.29 nF
3.29 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
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Descrizioni
Descrizioni di Infineon IRL2203NPBF fornite dai suoi distributori.
Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +51.03%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating116 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.29 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation130 W
Rds On Max7 mΩ
Recovery Time84 ns
Resistance7 MΩ
Rise Time160 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage1 V
Turn-Off Delay Time23 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height20.56 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità