Infineon IRG4BC30SPBF
$ 1.39
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-03-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
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600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
Descrizioni
Descrizioni di Infineon IRG4BC30SPBF fornite dai suoi distributori.
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans IGBT Chip N-CH 600V 34A 100mW 3-Pin(3+Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.4 V Current release time: 390 ns Power dissipation: 100 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:34A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
SINGLE IGBT, 600V, 34A; Transistor Type:; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time Max:590ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:68A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.4 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current34 A
Current Rating34 A
Element ConfigurationDual
Fall Time590 ns
Max Collector Current34 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity1000
PackagingBulk
Power Dissipation100 W
Rise Time18 ns
TerminationThrough Hole
Turn-Off Delay Time540 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)600 V
Dimensions
Height20.57 mm
Length10.54 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità