Infineon IRG4BC30SPBF

600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Trans IGBT Chip N-CH 600V 34A 100mW 3-Pin(3+Tab) TO-220AB Tube

100W 1.4V Freestanding 600V 34A TO-220AB Through hole mounting 10.54mm*4.69mm*8.77mm

IRG4BC30S Series 600 V 18 A Insulated Gate Bipolar Transistor - TO-220AB

Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.4 V Current release time: 390 ns Power dissipation: 100 W

Single Igbt, 600V, 34A; Continuous Collector Current:34A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:100W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Infineon Technologies IRG4BC30SPBF

SINGLE IGBT, 600V, 34A; Transistor Type:; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time Max:590ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:68A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V