Infineon IRFR3504ZTRPBF

Single N-Channel 40V 9 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
$ 1.025
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR3504ZTRPBF.

Newark

Datasheet12 pagine15 anni fa
Datasheet12 pagine21 anni fa
Datasheet12 pagine21 anni fa
Datasheet11 pagine21 anni fa

IHS

iiiC

RS (Formerly Allied Electronics)

DigiKey

Cronologia dell'inventario

Trend di 3 mesi:
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Parti alternative

Price @ 1000
$ 1.025
$ 0.872
$ 0.872
Stock
625,803
82,966
82,966
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
2 V
2 V
Rds On Max
9 mΩ
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
90 W
90 W
90 W
Input Capacitance
1.51 nF
1.51 nF
1.51 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-12-28
LTD Date2013-06-28

Parti correlate

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40V, N-Ch, 7.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
N-Channel PowerTrench® MOSFET 40V, 50A, 6.5mΩ
onsemiFDD6296
Fast Switching N-Channel PowerTrench® MOSFET, 30V, 50A, 8.8mΩ

Descrizioni

Descrizioni di Infineon IRFR3504ZTRPBF fornite dai suoi distributori.

Single N-Channel 40V 9 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 77 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 38 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 90

Alias del produttore

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  • Infineon Technologies
  • INF
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  • INFIN
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  • INFI
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  • INFIEON
  • INFINEON TECH
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  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFR3504Z
  • IRFR3504ZTR?PBF
  • IRFR3504ZTRPBF.
  • SP001556956