Infineon IRFR13N20DTRPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.235 Ohm; Id 13A; D-pak (TO-252AA); Pd 110W
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRFR13N20DTRPBF02KBulk
3h
Farnell
2
IRFR13N20DTRPBF01Cut Tape
10h
Win SourceWS-IRFR13N20DTRPBF132060
11h
Worldway ElectronicsIRFR13N20DTRPBF18.8697Tape & Reel
10h
UnikeyICIRFR13N20DTRPBF200010Tape & Reel
9h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFR13N20DTRPBF.

IHS

Datasheet11 pagine21 anni fa
Datasheet12 pagine21 anni fa

RS (Formerly Allied Electronics)

Future Electronics

iiiC

DigiKey

Parti alternative

Questo componente
Parti alternative
InfineonIRFR13N20DTRPBF
InfineonIRFR13N20DPBF
Price @ 1000
$ 1.08
Stock
310,983
146,541
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
13 A
13 A
Threshold Voltage
-
5.5 V
Rds On Max
235 mΩ
235 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
110 W
110 W
Input Capacitance
830 pF
830 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30

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onsemiHUF75925D3ST
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MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
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Descrizioni

Descrizioni di Infineon IRFR13N20DTRPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.235Ohm;ID 13A;D-Pak (TO-252AA);PD 110W
RS (Formerly Allied Electronics)
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - TO-252AA
Future Electronics
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ComSIT Distribution GmbH
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Newark
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon

Immagini

Infineon
Newark
element14 APAC
TME
iiiC
Future Electronics
LCSC

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFR13N20DTRPBF.
  • SP001567488