Infineon IRFR13N20DPBF
$ 1.05
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIRFR13N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.18Ohm;ID 14A;D-Pak (TO-252AA);PD 86W
InfineonIRFR9N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Descrizioni
Descrizioni di Infineon IRFR13N20DPBF fornite dai suoi distributori.
Single N-Channel 200 V 0.235 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, 200V, 14A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:200V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:13A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:52A; SMD Marking:IRFR13N20D; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance235 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance830 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance235 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max235 mΩ
Recovery Time210 ns
Resistance235 mΩ
Rise Time27 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time17 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)200 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità