Infineon IRFR13N15DPBF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIRFR18N15DTRPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W
InfineonIRFR6215PBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
Descrizioni
Descrizioni di Infineon IRFR13N15DPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.18Ohm;ID 14A;D-Pak (TO-252AA);PD 86W
Single N-Channel 150 V 0.18 Ohm 19 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 150V, 14A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:150V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:86W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Junction to Case Thermal Resistance A:1.75°C/W; On State resistance @ Vgs = 10V:180ohm; Package / Case:DPAK; Power Dissipation Pd:86W; Power Dissipation Pd:86W; Pulse Current Idm:56A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation86 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance180 mΩ
Package Quantity3000
Power Dissipation86 W
Rds On Max180 mΩ
Resistance180 Ω
Rise Time26 ns
Threshold Voltage5.5 V
Turn-Off Delay Time12 ns
Turn-On Delay Time8 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità