Infineon IRFB3206PBF

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
$ 1.04
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Arrow Electronics
2
IRFB3206PBF18.0991
RutronikTMOSP12103115050
23h
Rochester ElectronicsIRFB3206PBF4994
16h
Future ElectronicsIRFB3206PBF050Tube
RS (Formerly Allied Electronics)IRFB3206PBF01Bulk
7h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFB3206PBF.

Newark

Datasheet12 pagine12 anni fa
Datasheet11 pagine18 anni fa

IHS

iiiC

DigiKey

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRFB3206PBF
InfineonIRFB3206GPBF
Price @ 1000
$ 1.04
$ 1.52
Stock
1,172,087
265,213
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
-
Rds On Max
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
6.54 nF
6.54 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-27
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2026-05-31
LTD Date2026-11-30

Parti correlate

InfineonIRFB3206GPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
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60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220 package, TO220-3, RoHS
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onsemiFDP050AN06A0
Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220; PowerTrench®
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onsemiFDP060AN08A0
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VishayIRFZ34PBF
Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220-3
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Descrizioni

Descrizioni di Infineon IRFB3206PBF fornite dai suoi distributori.

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
Win Source
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, Pb-Free
RS (Formerly Allied Electronics)
Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF
Burklin Elektronik
Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole
Avnet
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W
Distrelec
HEXFET Power MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:210A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
element14 APAC
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.
Infineon

Immagini

Infineon
Augswan
Farnell
TME
element14 APAC
iiiC
South Microelectronics
Distrelec
International Rectifier

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFB 3206
  • IRFB 3206 PBF
  • IRFB 3206PBF
  • IRFB3206
  • IRFB3206 PBF
  • IRFB3206-PBF
  • IRFB3206PBF .
  • IRFB3206PBF.
  • SP001566480