La modalità scura è ora disponibile! Alterna tra le modalità chiara e scura. Le preferenze vengono salvate dopo l'accesso.

Scopri di più

Infineon IRFB3206PBF

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
$ 1.04
Obsolete
Scheda dati
Pagina del produttore

Prezzo e stock

Vedi tutte le interruzioni di prezzo
Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Rutronik
TMOSP12103
650
50
USD
1,071
0,857
0,857
17h
Rochester Electronics
IRFB3206PBF
94
USD
1,250
1,040
0,925
10h
Arrow Electronics
2
IRFB3206PBF
15.633
1
USD
2,525
2,525
2,525
2,525
2,525
DigiKey
448-IRFB3206PBF-ND
493
1
Tube
USD
3,200
2,077
1,435
1,435
1,435
RS (Formerly Allied Electronics)
IRFB3206PBF
0
1
Bulk
USD
3,200
2,940
2,940
2,940
2,940
23h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFB3206PBF.

Newark

Datasheet12 pagine12 anni fa
Datasheet11 pagine18 anni fa

element14 APAC

iiiC

DigiKey

Cronologia dell'inventario

Trend di 3 mesi:
+32.95%
Powered bySpectra logo

Modelli CAD

Scarica il simbolo Infineon IRFB3206PBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3D
Scarica
EE Concierge
SimboloImpronta
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Parti alternative

Questo componente
Parti alternative
InfineonIRFB3206PBF
InfineonIRFB3206GPBF
Price @ 1000
$ 1.04
$ 2.765
Stock
885,897
312,597
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
-
Rds On Max
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
6.54 nF
6.54 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-27
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2026-05-31
LTD Date2026-11-30

Parti correlate

InfineonIRFB3206GPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
Dettagli
InfineonIRFB7537PBF
N Channel 60 V 3.3 mO 230 W Flange Mount HexFet Power MosFet - TO-220AB
Dettagli
InfineonIRFB7534PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220 package, TO220-3, RoHS
Dettagli
onsemiFDP050AN06A0
Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220; PowerTrench®
Dettagli
onsemiFDP060AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 6mΩ
Dettagli
VishayIRFZ34PBF
Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220-3
Dettagli

Descrizioni

Descrizioni di Infineon IRFB3206PBF fornite dai suoi distributori.

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
Win Source
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, Pb-Free
RS (Formerly Allied Electronics)
Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF
Burklin Elektronik
Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 75A/60V TO220 IRFB 3206 PBF
Rapid Electronics
Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole
Avnet
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W
Distrelec
HEXFET Power MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:210A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
element14 APAC
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.
Infineon

Immagini

Infineon
Augswan
Farnell
TME
RS APAC
element14 APAC
iiiC
South Microelectronics
Distrelec
International Rectifier

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFB 3206
  • IRFB 3206 PBF
  • IRFB 3206PBF
  • IRFB3206
  • IRFB3206 PBF
  • IRFB3206-PBF
  • IRFB3206PBF .
  • IRFB3206PBF.
  • SP001566480