Infineon IRF7815PBF

HEXFET Power MOSFET Small Signal Field-Effect Transistor
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF7815PBF03800Bulk
20h
FarnellIRF7815PBF01
1d
Win SourceWS-IRF7815PBF11.00040
4h
Worldway ElectronicsIRF7815PBF12.0347Tube
3h
ICPartonlineIRF7815PBF8292
2d

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7815PBF.

IHS

Datasheet9 pagine16 anni fa
Datasheet10 pagine16 anni fa

iiiC

Parti alternative

Questo componente
Parti alternative
InfineonIRF7815PBF
InfineonIRF7815TRPBF
Price @ 1000
$ 0.604
Stock
53,123
580,213
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
5.1 A
5.1 A
Threshold Voltage
4 V
-
Rds On Max
43 mΩ
43 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.647 nF
1.647 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16

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Descrizioni

Descrizioni di Infineon IRF7815PBF fornite dai suoi distributori.

HEXFET Power MOSFET Small Signal Field-Effect Transistor
ComSIT Distribution GmbH
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
Distrelec
Benefits: RoHS Compliant | Target Applications: Load Switch High Side
Infineon
Trans MOSFET N-CH 150V 5.1A 8-Pin SO
Avnet
MOSFET, 150V, 5A, 44MOHM, 25 NC QG, SO8
RS (Formerly Allied Electronics)
Power Field-Effect Transistor, 5.1A I(D), 150V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET,W DIODE,N CH,150V,5.1A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
element14 APAC

Immagini

Infineon
TME
Distrelec
element14 APAC
RS (Formerly Allied Electronics)
International Rectifier
iiiC

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Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • SP001575250