onsemi FDS2572

Name: onsemi FDS2572
Brand: onsemi
SKU: FDS2572

N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

$ 0.809

Production

Pagina del produttore Scheda dati

Prezzo e stock

Distributori autorizzati

Distributori di stock non autorizzati

Rivenditori non autorizzati

Vedi tutte le interruzioni di prezzo

Distributor		SKU		Min	Pkg
Newark	2	FDS2572	69	1	Cut Tape	2,730	1,870	1,700	1,700	1,700
Verical	3	FDS2572	2500	2500						0,683
Arrow Electronics	2	FDS2572	1212	1		0,920	0,841	0,771	0,750	0,750
Rochester Electronics		FDS2572	4834					0,934	0,775	0,691	19h
DigiKey	3	FDS2572CT-ND	1746	1	Cut Tape	2,600	1,674	1,143	0,843	0,843

Cronologia dell'inventario

Tendenza a 3 mesi: -43.92%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDS2572.

IHS

Datasheet13 pagine2 anni fa

Datasheet12 pagine24 anni fa

Newark

Upverter

Fairchild Semiconductor

onsemi

Cronologia dell'inventario

Trend di 3 mesi:

-43.92%

Modelli CAD

Scarica il simbolo onsemi FDS2572, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTE	eCAD	mCAD	FILE
Component Search Engine	SimboloImpronta	3D	Scarica
EE Concierge	SimboloImpronta
SnapEDA	Impronta		Scarica
Ultra Librarian	SimboloImpronta		Scarica

Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD

Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-09-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

onsemiFDS2582

N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ

Dettagli

VishaySI7846DP-T1-E3

Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

Dettagli

STMicroelectronicsSTS5N15F4

N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFET

Dettagli

onsemiFDS86252

FDS86252 Series 150 V 4.5 A 55 mOhm N-Channel PowerTrench MOSFET - SOIC-8

Dettagli

VishaySI7898DP-T1-E3

SI7898DP-T1-E3 N-CHANNEL MOSFET TRANSISTOR, 3 A, 150 V, 8-PIN SOIC

Dettagli

VishaySI7898DP-T1-GE3

N-Channel 150 V 85 mO 17 nC Surface Mount Power Mosfet - PowerPAK SO-8

Dettagli

Descrizioni

Descrizioni di onsemi FDS2572 fornite dai suoi distributori.

N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

onsemi

N-Channel 150 V 47 mOhm UltraFET Trench Mosfet SOIC-8

Future Electronics

Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Package/Case:8-SOIC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Current Rating:4.9A; Mounting Type:Surface Mount; No. of Pins:8 ;RoHS Compliant: No

Newark

UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Fairchild Semiconductor

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; SMD Marking:FDS2572; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

Immagini

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Cronologia dell'inventario

Tendenza a 3 mesi: -43.92%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageSOIC

Contact PlatingTin

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight130 mg

Technical

Continuous Drain Current (ID)4.9 A

Current Rating4.9 A

Drain to Source Breakdown Voltage150 V

Drain to Source Resistance53 mΩ

Drain to Source Voltage (Vdss)150 V

Element ConfigurationSingle

Fall Time22 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance2.05 nF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation2.5 W

Min Breakdown Voltage150 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

PackagingCut Tape

Power Dissipation2.5 W

Rds On Max47 mΩ

Resistance47 mΩ

Rise Time4 ns

Schedule B8541290080

Threshold Voltage4 V

Turn-Off Delay Time44 ns

Turn-On Delay Time14 ns

Voltage Rating (DC)150 V

Dimensions

Height1.75 mm

Length5 mm

Width4 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDS2572.

IHS

Datasheet13 pagine2 anni fa

Datasheet12 pagine24 anni fa

Newark

Upverter

Fairchild Semiconductor

onsemi

Conformità

Classificazione ambientale

China RoHSCompliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCYes

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A