Infineon IRF7424TRPBF

MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S
$ 0.491
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
DigiKey
3
IRF7424PBFCT-ND21711Cut Tape
Arrow ElectronicsIRF7424TRPBF55001
RS (Formerly Allied Electronics)IRF7424TRPBF04KBulk
2h
Avnet
2
39M357101
15h
Farnell
3
IRF7424TRPBF11.2955Cut Tape
13h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7424TRPBF.

IHS

Datasheet9 pagine21 anni fa
Datasheet9 pagine21 anni fa

RS (Formerly Allied Electronics)

iiiC

_legacy Avnet

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRF7424TRPBF
Diodes Inc.DMP3020LSS-13
Price @ 1000
$ 0.491
$ 0.351
Stock
608,011
1,523,196
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOP
Drain to Source Voltage (Vdss)
-30 V
30 V
Continuous Drain Current (ID)
11 A
12 A
Threshold Voltage
-2.5 V
-
Rds On Max
13.5 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
20 V
25 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
4.03 nF
1.802 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-04
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31

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MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
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Descrizioni

Descrizioni di Infineon IRF7424TRPBF fornite dai suoi distributori.

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
RS (Formerly Allied Electronics)
Single P-Channel 30V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
Future Electronics
Power Field-Effect Transistor, 11A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
Power MOSFET, P Channel, 30 V, 11 A, 0.0135 ohm, SOIC, Surface Mount
Avnet
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Verical
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
P CHANNEL MOSFET, 11A; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
Farnell
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-11A; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Drain Source On Resistance @ 10V:13.5mohm; Drain Source On Resistance @ 4.5V:22mohm ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Infineon

Immagini

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Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF7424-TRPBF
  • IRF7424TRPBF.
  • SP001554282