Infineon IRF7424PBF
$ 0.34
Obsolete
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Distributori autorizzati
Distributori di stock non autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF7424PBF | 9 | 11h | |||||||||
| RS (Formerly Allied Electronics) | IRF7424PBF | 0 | 3800 | Bulk | 2h | |||||||
| Farnell | IRF7424PBF. | 0 | 1 | 10h | ||||||||
| Win Source | WS-IRF7424PBF | 84.190 | 90 | 11h | ||||||||
| Worldway Electronics | IRF7424PBF | 9861 | 7 | Tube | 6h |
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIRF7424TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
VishaySI4425DDY-T1-GE3
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
Descrizioni
Descrizioni di Infineon IRF7424PBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
Single P-Channel 30 V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
P-channel MOSFET Transistor, 11 A 30 V, 8-Pin SOIC
IRF7424PBF,MOSFET, P-CHANNEL, -30V, -11A, 13.5 MOHM, 75 NC Q
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:11A; Resistance, Rds On:0.0135ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-2.5V; Case Style:SOIC; Termination ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-11A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:47A; SMD Marking:F7424; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time76 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Recovery Time60 ns
Resistance13.5 MΩ
Rise Time23 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Width4.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità