Infineon IRF6727MTR1PBF

Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
$ 3.05
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF6727MTR1PBF01KBulk
15h
Farnell
2
IRF6727MTR1PBF01Cut Tape
22h
Win SourceWS-IRF6727MTR1PBF2040
1d
Worldway ElectronicsIRF6727MTR1PBF97557Tape & Reel
22h
GreenTree ElectronicsIRF6727MTR1PBF100
3d

Schede tecniche e documenti

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IHS

Datasheet9 pagine17 anni fa

element14 APAC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20

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Descrizioni

Descrizioni di Infineon IRF6727MTR1PBF fornite dai suoi distributori.

Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
IHS
MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.22 mOhm, ID 32A, DirectFET
RS (Formerly Allied Electronics)
Trans MOSFET N-CH 30V 32A 7-Pin Direct-FET MX T/R
Verical
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:32A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
element14 APAC
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
International Rectifier

Immagini

Farnell
TME
RS (Formerly Allied Electronics)
Distrelec
International Rectifier

Alias del produttore

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  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA