Infineon IRF6729MTR1PBF
$ 4.57
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6729MTR1PBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
Parti correlate
InfineonIRF6727MTR1PBF
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
Descrizioni
Descrizioni di Infineon IRF6729MTR1PBF fornite dai suoi distributori.
Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins7
Technical
Continuous Drain Current (ID)190 A
Drain to Source Breakdown Voltage30 V
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.03 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation2.8 W
Rds On Max1.8 mΩ
Rise Time37 ns
Threshold Voltage1.8 V
Turn-Off Delay Time20 ns
Turn-On Delay Time22 ns
Dimensions
Height506 µm
Length6.35 mm
Width5.05 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6729MTR1PBF.
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità