Infineon IRF6618TRPBF
$ 1.21
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF6618TRPBF | 2279 | 1 | |||||||||
| Rochester Electronics | IRF6618TRPBF | 46 | 18h | |||||||||
| DigiKey | IRF6618TRPBFCT-ND | 1969 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRF6618TRPBF | 0 | 4800 | Bulk | 8h | |||||||
| Farnell | IRF6618TRPBF | 0 | 1 | Cut Tape | 6h |
Cronologia dell'inventario
Tendenza a 3 mesi: -8.30%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
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Scarica il simbolo Infineon IRF6618TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
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Questo componente
Parti alternative
Price @ 1000
$ 1.21
$ 3.91
Stock
553,290
45,408
Authorized Distributors
5
2
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
30 A
30 A
Threshold Voltage
1.64 V
-
Rds On Max
2.2 mΩ
2.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
89 W
Input Capacitance
5.64 nF
5.64 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-25
LTD Date2013-02-25
Parti correlate
STMicroelectronicsSTL150N3LLH5
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
Descrizioni
Descrizioni di Infineon IRF6618TRPBF fornite dai suoi distributori.
Single N-Channel 30 V 3.4 mOhm 65 nC HEXFET® Power Mosfet - DirectFET®
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes., MG-WDSON-5, RoHS
Infineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes
2.8W(Ta),89W(Tc) 20V 2.35V@ 250¦ÌA 65nC@ 4.5 V 1N 30V 2.2m¦¸@ 30A,10V 30A,170A 5.64nF@15V MG-WDSON-5 , 6.35mm*5.05mm*700¦Ìm
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -8.30%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time8.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.64 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance2.2 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max2.2 mΩ
Resistance2.2 MΩ
Rise Time71 ns
Schedule B8541290080
Threshold Voltage1.64 V
Turn-Off Delay Time27 ns
Turn-On Delay Time21 ns
Voltage Rating (DC)30 V
Dimensions
Height700 µm
Length6.35 mm
Width5.0546 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità