Infineon IRF6726MTR1PBF
$ 4.26
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6726MTR1PBF.
Modelli CAD
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|---|---|---|---|
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 4.26
$ 1.33
Stock
31,909
171,203
Authorized Distributors
2
4
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
32 A
32 A
Threshold Voltage
1.7 V
-
Rds On Max
1.7 mΩ
1.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
2.8 W
Input Capacitance
6.14 nF
6.14 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di Infineon IRF6726MTR1PBF fornite dai suoi distributori.
MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.3 mOhm, ID 32A, DirectFET
Trans MOSFET N-CH 30V 32A 7-Pin Direct-FET MT T/R
Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N, DIRECTFET MT; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:32A; Package / Case:MT; Power Dissipation Pd:2.8W; Pulse Current Idm:250A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.7 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.14 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
On-State Resistance1.7 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.7 mΩ
Recovery Time41 ns
Rise Time30 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.7 V
Turn-Off Delay Time25 ns
Turn-On Delay Time20 ns
Dimensions
Height676 µm
Length5.45 mm
Width5.05 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6726MTR1PBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità