Infineon IRF630NSTRLPBF

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK
$ 1.63
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF630NSTRLPBF.

IHS

Datasheet11 pagine15 anni fa

Farnell

Newark

iiiC

Jameco

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 1.63
$ 1.33
Stock
573,869
127,636
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
9.3 A
9.3 A
Threshold Voltage
-
4 V
Rds On Max
300 mΩ
300 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
82 W
82 W
Input Capacitance
575 pF
575 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30

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MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
Single N-Channel 200 V 105 mOhm 29 nC HEXFET® Power Mosfet - D2PAK
STMicroelectronicsSTB19NF20
N-channel 200 V, 0.11 Ohm typ., 15 A MESH OVERLAY Power MOSFET in D2PAK package

Descrizioni

Descrizioni di Infineon IRF630NSTRLPBF fornite dai suoi distributori.

Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | MOSFET N-CH 200V 9.3A D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2
HEXFET POWER MOSFET Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82

Alias del produttore

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  • Infineon Technologies
  • INF
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  • INFIN
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  • INFI
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  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF630NS
  • SP001564548