Infineon IRF540NLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-262; Pd 130W; Vgs +/-2
$ 1.346
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester ElectronicsIRF540NLPBF22.000
22h
RS (Formerly Allied Electronics)IRF540NLPBF010Bulk
15h
FarnellIRF540NLPBF01
8h
Microchip USA
2
IRF540NL243600Tube
1d
VericalIRF540NLPBF22.000341

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF540NLPBF.

Farnell

Datasheet11 pagine22 anni fa
Datasheet11 pagine20 anni fa

Newark

IHS

RS (Formerly Allied Electronics)

DigiKey

Cronologia dell'inventario

Trend di 3 mesi:
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Parti alternative

Questo componente
Parti alternative
InfineonIRF540NLPBF
InfineonIRF540NLPBF
Price @ 1000
$ 1.346
$ 1.346
Stock
365,457
365,457
Authorized Distributors
3
3
Mount
Through Hole
Through Hole
Case/Package
TO-262-3
TO-262-3
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
33 A
33 A
Threshold Voltage
4 V
4 V
Rds On Max
44 mΩ
44 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
130 W
130 W
Input Capacitance
1.96 nF
1.96 nF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-04-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)

Parti correlate

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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-262;PD 92W;VGS +/-20
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IRF9540NLPBF P-channel MOSFET Transistor, 23 A, 100 V, 3-Pin TO-262
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InfineonIRF5210LPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
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onsemiFDI150N10
PowerTrench® MOSFET, N-Channel, 100V, 57A, 16mΩ
Dettagli

Descrizioni

Descrizioni di Infineon IRF540NLPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2
RS (Formerly Allied Electronics)
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-262-3
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Semicontronic
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Infineon
N CHANNEL MOSFET, 100V, 33A, TO-262; Tra; N CHANNEL MOSFET, 100V, 33A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
element14 APAC
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 33 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130
Distrelec

Immagini

Infineon
Farnell
RS APAC
TME
element14
LZChips
Future Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF540NL
  • IRF540NLPBF.
  • SP001571292