Infineon IRF5210LPBF
$ 3.04
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF5210LPBF | 0 | 5 | Bulk | 14h | |||||||
| Farnell | IRF5210LPBF | 0 | 1 | 7h | ||||||||
| Microchip USA | IRF5210L | 373 | 600 | Tube | 1d | |||||||
| Win Source | WS-IRF5210LPBF | 20 | 14 | 22h | ||||||||
| Worldway Electronics | IRF5210LPBF | 10.246 | 7 | Tube | 2d |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-08-19
LTD Date2010-02-19
Parti correlate
InfineonIRF540NLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2
InfineonIRFSL4510PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Descrizioni
Descrizioni di Infineon IRF5210LPBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - TO-262-3
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, P, 100V, 40A TO262; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-262AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-40A; Package / Case:TO-262AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:140A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)38 A
Current Rating-40 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.1 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time63 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time72 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-100 V
Dimensions
Height15.1 mm
Length10.54 mm
Width4.69 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF5210LPBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità