Infineon IRFSL3607PBF
$ 1.94
Obsolete
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SKU
Min
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Cronologia dell'inventario
Nessun dato disponibile
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-14
Lifecycle StatusObsolete (Last Updated: 1 month ago)
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MOSFET P-CH 55V 31A TO262 "P-Channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262"
Descrizioni
Descrizioni di Infineon IRFSL3607PBF fornite dai suoi distributori.
Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - TO-262-3
MOSFET N-CH 75V 80A TO262 N-Channel 75 V 80A (Tc) 140W (Tc) Through Hole TO-262
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N, TO-262; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:75V; Current, Id Cont:80A; Resistance, Rds On:7.34mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-262; Termination Type:Through Hole; Current, Idm Pulse:310A; Power Dissipation:140W
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Nessun dato disponibile
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.07 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max9 mΩ
Recovery Time50 ns
Rise Time110 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità