Infineon IRF4104PBF
$ 0.799
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: -42.90%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF4104PBF.
Modelli CAD
Scarica il simbolo Infineon IRF4104PBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.799
$ 2.66
Stock
1,100,550
454,344
Authorized Distributors
5
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220-3
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
4 V
2 V
Rds On Max
5.5 mΩ
5.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
3 nF
3 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-04-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-08-19
LTD Date2010-02-19
Parti correlate
InfineonIRF3709PBF
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A⑥) | MOSFET N-CH 30V 90A TO-220AB
NXP SemiconductorsPSMN8R0-40PS
Mosfet Transistor, N Channel, 77 A, 40 V, 6.2 Mohm, 10 V, 3 V Rohs Compliant: Yes
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Descrizioni
Descrizioni di Infineon IRF4104PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 120A;TO-220AB;PD 140W;-55de
Single N-Channel 40 V 5.5 mOhm 100 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
140W(Tc) 20V 4V@ 250¦ÌA 100nC@ 10 V 1individualNChannel 40V 5.5m¦¸@ 75A,10V 75A 3nF@25V TO-220AB Through hole mounting 10mm*4.4mm*15.65mm
MOSFET, N, 40V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -42.90%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.5 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max5.5 mΩ
Recovery Time35 ns
Resistance5.5 MΩ
Rise Time130 ns
Threshold Voltage4 V
Turn-Off Delay Time38 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)40 V
Dimensions
Height20.56 mm
Length10.668 mm
Width4.826 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF4104PBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità