onsemi FDP6670AL

Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
$ 0.654
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Verical
4
FDP6670AL1569429
Rochester ElectronicsFDP6670AL26.871
6h
FarnellFDP6670AL01
5h
element14 APACFDP6670AL01
19h
Component Stockers USAFDP6670AL35.940
>1wk

Schede tecniche e documenti

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IHS

Datasheet5 pagine22 anni fa
Datasheet0 pagine0 anni fa

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Fairchild Semiconductor

iiiC

Newark

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-03-24
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di onsemi FDP6670AL fornite dai suoi distributori.

Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
Verical
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
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This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Fairchild Semiconductor

Immagini

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element14 APAC
Rochester Electronics

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