Infineon IRF3808SPBF
$ 3.63
Obsolete
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SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Trend storico dell'inventario non disponibile
Modelli CAD
0 modelli disponibili
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF3808SPBF.
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Questo componente
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Price @ 1000
$ 3.63
$ 1.359
$ 1.359
Stock
50,826
1,668,975
1,668,975
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
7 mΩ
7 mΩ
7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.31 nF
5.31 nF
5.31 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-12-19
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Parti correlate
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Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
STMicroelectronicsSTB140NF75T4
STMicroelectronics N-Channel MOSFET STripFET F3, Vds=75V, 120A, D2PAK (TO-263), SMD, 3-Pin
InfineonIRF3205STRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V
InfineonIRF3205SPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V
STMicroelectronicsSTB80NF55-06T4
STMicroelectronics N-Channel MOSFET, Vds=55V, 80A, D2PAK (TO-263), SMD, 3-Pin
Descrizioni
Descrizioni di Infineon IRF3808SPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
MOSFET N-CH 75V 106A D2PAK / Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:5310pF; Current Id Max:106A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:550A; Reverse Recovery Time trr Typ:93ns; SMD Marking:F3808; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Trend storico dell'inventario non disponibile
Modelli CAD
0 modelli disponibili
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating106 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.31 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max7 mΩ
Resistance7 MΩ
Reverse Recovery Time93 ns
Rise Time140 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)75 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF3808SPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità