Infineon IRF3808SPBF

Name: Infineon IRF3808SPBF
Brand: Infineon
SKU: IRF3808SPBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 5.9MILLIOHMS; Id 106A; D2PAK; Pd 200W; Vgs +/-2

$ 3.19

Obsolete

Pagina del produttore Scheda dati

Prezzo e stock

Distributori autorizzati

Distributori di stock non autorizzati

Rivenditori non autorizzati

Vedi tutte le interruzioni di prezzo

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF3808SPBF	0	300	Bulk				3,190	3,190	19h
Farnell	IRF3808SPBF	0	1		3,868*	3,868*	2,983*	2,138*	2,138*	1d
Win Source	WS-IRF3808SPBF	5471	2			29,997	26,893	26,893	26,893	3h
Worldway Electronics	IRF3808SPBF	12.906	7	Tube		1,323	1,283	1,215	1,215	2h
SHENGYU ELECTRONICS	IRF3808SPBF	12.470	1		0,613	0,600	0,580	0,560	0,540	2d

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

1 parte disponibile

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF3808SPBF.

IHS

Datasheet13 pagine12 anni fa

Datasheet12 pagine12 anni fa

Newark

RS (Formerly Allied Electronics)

DigiKey

Parti alternative

Questo componente

Parti alternative

InfineonIRF3808SPBF

InfineonIRF3808STRLPBF

Price @ 1000

$ 3.19

$ 1.43

Stock

42,266

475,544

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

5.31 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-12-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

Parti correlate

InfineonIRF1407STRLPBF

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK

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STMicroelectronicsSTB140NF75T4

STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK

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InfineonIRF3205STRLPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

Dettagli

InfineonIRF3205SPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

Dettagli

STMicroelectronicsSTB150NF55T4

N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET

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STMicroelectronicsSTB80NF55-06T4

Power MOSFET, N Channel, 55 V, 40 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount

Dettagli

Descrizioni

Descrizioni di Infineon IRF3808SPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2

RS (Formerly Allied Electronics)

MOSFET N-CH 75V 106A D2PAK / Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube

Win Source

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:5310pF; Current Id Max:106A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:550A; Reverse Recovery Time trr Typ:93ns; SMD Marking:F3808; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

Immagini

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

SP001570146

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

1 parte disponibile

Specifiche tecniche

Physical

Case/PackageD2PAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Technical

Continuous Drain Current (ID)75 A

Current Rating106 A

Drain to Source Breakdown Voltage75 V

Drain to Source Resistance7 mΩ

Drain to Source Voltage (Vdss)75 V

Dual Supply Voltage75 V

Element ConfigurationSingle

Fall Time120 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance5.31 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation200 W

Min Breakdown Voltage75 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

On-State Resistance7 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation200 W

Rds On Max7 mΩ

Resistance7 MΩ

Reverse Recovery Time93 ns

Rise Time140 ns

TerminationSMD/SMT

Threshold Voltage4 V

Turn-Off Delay Time68 ns

Turn-On Delay Time16 ns

Voltage Rating (DC)75 V

Dimensions

Height5.084 mm

Length10.668 mm

Width9.65 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF3808SPBF.

IHS

Datasheet13 pagine12 anni fa

Datasheet12 pagine12 anni fa

Newark

RS (Formerly Allied Electronics)

DigiKey

Conformità

Classificazione ambientale

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Conflict Mineral StatementN/AN/A

Reach Statement6 pagine12 anni fa

Rohs Statement1 pagina12 anni fa