Infineon IRF3205SPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

MOSFET N-CH 55V 110A D2PAK N-Channel 55 V 110A (Tc) 200W (Tc) Surface Mount D2PAK

Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - D2PAK

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK Tube

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 200 W

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

MOSFET, N, 55V, 110A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:110A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation on 1 Sq. PCB:3.7W; Pulse Current Idm:390A; SMD Marking:IRF3205S; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V