Infineon IRF1404ZPBF
$ 0.799
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -13.35%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo Infineon IRF1404ZPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.799
$ 0.799
$ 0.799
Stock
686,807
686,807
686,807
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
3.7 mΩ
3.7 mΩ
3.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
4.34 nF
4.34 nF
4.34 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-06
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2012-06-01
LTD Date2012-09-01
Parti correlate
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
VishaySUP90N04-3M3P-GE3
MOSFET,N CH,W DIODE,40V,90A,TO220AB; Transistor Polarity:N Channel; Continuous D
InfineonIRF4104PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 120A;TO-220AB;PD 140W;-55de
InfineonIRL1404ZPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.5Milliohms;ID 200A;TO-220AB;PD 230W;-55de
Descrizioni
Descrizioni di Infineon IRF1404ZPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.7Milliohms;ID 190A;TO-220AB;PD 220W;-55de
Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-220AB Tube
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
N CH MOSFET, 40V, 190A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:220W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:190A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:3.7ohm; Package / Case:TO-220AB; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulse Current Idm:750A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -13.35%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time58 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.34 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance3.7 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max3.7 mΩ
Recovery Time42 ns
Resistance3.7 Ω
Rise Time110 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)40 V
Dimensions
Height20.56 mm
Length10.54 mm
Width4.69 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità