Infineon IRF1010NSTRLPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; D2Pak; PD 180W; VGS +/-20V
$ 0.817
NRND
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
NewarkIRF1010NSTRLPBF6821Cut Tape
Arrow Electronics
2
IRF1010NSTRLPBF851
RutronikTMOSP11686800800
7h
Rochester ElectronicsIRF1010NSTRLPBF549
23m
DigiKey
3
IRF1010NSTRLPBFCT-ND15701Cut Tape

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF1010NSTRLPBF.

IHS

Datasheet11 pagine22 anni fa

Newark

Upverter

RS (Formerly Allied Electronics)

Burklin Elektronik

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-05-25
Lifecycle StatusNRND (Last Updated: 3 months ago)

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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V
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STMicroelectronicsSTB80NF55-08T4
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STMicroelectronicsSTB140NF55T4
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Descrizioni

Descrizioni di Infineon IRF1010NSTRLPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V
RS (Formerly Allied Electronics)
Single N-Channel 55V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
Future Electronics
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 85A 3-Pin(2+Tab) D2PAK T/R
Verical
MOSFET, N-CH, 55V, 85A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 180W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Farnell
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:85A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:180W ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 85 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 11 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 76 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 180
Distrelec

Immagini

Infineon
RS (Formerly Allied Electronics)
Newark
Farnell
TME
RS
Future Electronics
Distrelec
LZChips

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • 1010NSTRLPBF
  • SP001571236