Infineon IPB65R150CFDATMA1
$ 1.88
Obsolete
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Min
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Questo componente
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Price @ 1000
$ 1.88
$ 2.137
Stock
2,180,010
478,429
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263-3
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
22.4 A
22.4 A
Threshold Voltage
-
-
Rds On Max
150 mΩ
150 mΩ
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
195.3 W
195.3 W
Input Capacitance
2.34 nF
2.34 nF
Supply Chain
Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-08-31
LTD Date2024-02-29
Parti correlate
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MOSFET N-CH 650V 18A D2PAK / N-Channel 650 V 18A (Ta) 101W (Tc) Surface Mount PG-TO263-3
VishaySIHB23N60E-GE3
MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
STMicroelectronicsSTB33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
VishaySIHB22N60S-E3
S-Series N-Ch 650 V 0.19 Ohm Surface Mount High Voltage Power Mosfet - D2PAK-3
Descrizioni
Descrizioni di Infineon IPB65R150CFDATMA1 fornite dai suoi distributori.
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
195.3W(Tc) 20V 4.5V@ 900µA 86nC@ 10 V 1individualNChannel 650V 150mΩ@ 9.3A,10V 22.4A 2.34nF@100V TO-263 SMD mount 10mm*9.25mm*4.4mm
MOSFET, N-CH, 650V, 22.4A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 22.4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CFD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)22.4 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time5.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.34 nF
Max Dual Supply Voltage650 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance150 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation195.3 W
Rds On Max150 mΩ
Rise Time7.6 ns
Schedule B8541290080
Turn-Off Delay Time52.8 ns
Turn-On Delay Time12.4 ns
Dimensions
Height4.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IPB65R150CFDATMA1.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità