Infineon IPB65R150CFDAATMA1

Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
$ 2.187
EOL
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
DigiKey
3
448-IPB65R150CFDAATMA1CT-ND11921Cut Tape
Rochester ElectronicsIPB65R150CFDAATMA11674
13h
Future Electronics
2
IPB65R150CFDAATMA101KTape & Reel
AvnetIPB65R150CFDAATMA101K
16h
Arrow ElectronicsIPB65R150CFDAATMA101K

Schede tecniche e documenti

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IHS

Datasheet16 pagine13 anni fa

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Parti alternative

Questo componente
Parti alternative
InfineonIPB65R150CFDAATMA1
InfineonIPB65R150CFDATMA1
Price @ 1000
$ 2.187
$ 1.88
Stock
502,529
1,282,426
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
TO-263-3
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
22.4 A
22.4 A
Threshold Voltage
-
-
Rds On Max
150 mΩ
150 mΩ
Gate to Source Voltage (Vgs)
-
20 V
Power Dissipation
195.3 W
195.3 W
Input Capacitance
2.34 nF
2.34 nF

Supply Chain

Country of OriginAustria, Germany, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-10
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-30
LTD Date2027-03-31

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Trans MOSFET N-CH 650V 17.5A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Descrizioni

Descrizioni di Infineon IPB65R150CFDAATMA1 fornite dai suoi distributori.

Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Verical
IPB65R150CFDA Series 650 V 22.4 A CoolMOS CFDA Power Transistor - TO-263-3
Future Electronics
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
Infineon SCT
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
Infineon

Immagini

Future Electronics
UTSource
Rochester Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IPB65R150CFDA
  • SP000928270