Infineon BSM50GB60DLCHOSA1

Trans IGBT Module N-CH 600V 75A 280000mW 7-Pin 34MM Tray
$ 39.87
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon BSM50GB60DLCHOSA1.

IHS

Datasheet9 pagine26 anni fa
Datasheet0 pagine0 anni fa

Infineon

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Questo componente
Parti alternative
InfineonBSM50GB60DLCHOSA1
InfineonBSM50GB60DLCHOSA1
Price @ 1000
$ 39.87
$ 39.87
Stock
58,367
58,367
Authorized Distributors
1
1
Mount
Screw
Screw
Case/Package
Module
Module
Collector Emitter Breakdown Voltage
600 V
600 V
Max Collector Current
75 A
75 A
Power Dissipation
-
-
Collector Emitter Saturation Voltage
2.45 V
2.45 V
Reverse Recovery Time
-
-

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon BSM50GB60DLCHOSA1 fornite dai suoi distributori.

Trans IGBT Module N-CH 600V 75A 280000mW 7-Pin 34MM Tray
Verical
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design, AG-34MM-1, RoHS
Infineon SCT
Transistor IGBT Module N-CH 600V 75A 20V Screw Mount Tray
Avnet
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
IHS
BSM50GB60 INSULATED GATE BIPOLAR TRANSI;
Farnell
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; wind; solar
Infineon

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  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BSM50GB60DLC
  • SP000100471