onsemi FMG2G75US60

IGBT Module Half Bridge 600V 75A 310W Chassis Mount 7PM-GA
Obsolete
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FMG2G75US60.

IHS

Datasheet9 pagine24 anni fa

Farnell

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-09-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-09-12
LTD Date2010-03-12

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Descrizioni

Descrizioni di onsemi FMG2G75US60 fornite dai suoi distributori.

IGBT Module Half Bridge 600V 75A 310W Chassis Mount 7PM-GA
Avnet
600V, 75A IGBT Module (Molding Type)
Onlinecomponents.com
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
IHS
IGBT MODULE 600V 75A 310W 7PMGA
Fly-Wing Technology
IGBT MODULE, 600V, 75A; Transistor Type:IGBT Module; Transistor Polarity:NPN; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:7PM-GA; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:150A; External Depth:93mm; Fixing Centres:80mm; Fixing Hole Diameter:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:310W; Time, Rise:40ns; Transistors, No. of:2
Farnell

Immagini

Farnell
UTSource
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  • ON Semi - ON Semiconductor
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  • ON Semiconductor Inc.
  • onsemiconductor
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