Infineon BSM75GB60DLCHOSA1

Trans IGBT Module N-CH 600V 100A 355000mW 7-Pin Tray
$ 43.27
Obsolete
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Datasheet9 pagine26 anni fa

Infineon

IHS

Elcodis

iiiC

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon BSM75GB60DLCHOSA1 fornite dai suoi distributori.

Trans IGBT Module N-CH 600V 100A 355000mW 7-Pin Tray
Verical
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design, AG-34MM-1, RoHS
Infineon SCT
Transistor IGBT Module N-CH 600V 100A 20V Screw Mount Tray
Avnet
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
IHS
BSM75GB60 INSULATED GATE BIPOLAR TRANSI;
Farnell
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance;; Highest reliability | Target Applications: drives; solar; ups
Infineon

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  • INFINEON/IR
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  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BSM75GB60DLC
  • SP000100469