Infineon AUIRF1405ZS
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
Scarica il simbolo Infineon AUIRF1405ZS, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
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|---|---|---|---|
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.64
$ 1.64
Stock
71,519
161,584
161,584
Authorized Distributors
2
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
150 A
150 A
150 A
Threshold Voltage
2 V
-
-
Rds On Max
4.9 mΩ
4.9 mΩ
4.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
230 W
230 W
230 W
Input Capacitance
4.78 nF
4.78 nF
4.78 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di Infineon AUIRF1405ZS fornite dai suoi distributori.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 150A Automotive 3-Pin(2+Tab) D2PAK Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,N CH,SCH DIODE,55V,150A,D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; On Resistance Rds(on):3700µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:150A; Power Dissipation Pd:230W; Voltage Vgs Max:20V
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Braking
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)150 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time82 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.78 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.9 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max4.9 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time48 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità