Infineon IRF2204SPBF
$ 1.44
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +46.93%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo Infineon IRF2204SPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-02-27
LTD Date2008-08-01
Parti correlate
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MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;D2Pak;PD 200W;VGS +/-20V
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In a Pack of 5, N-Channel MOSFET, 190 A, 40 V, 3-Pin D2PAK Infineon IRF1404ZSPBF
STMicroelectronicsSTB200NF03T4
N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK STripFET II POWER MOSFET
STMicroelectronicsSTB200NF04T4
STB200NF04T4 N-channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK
Descrizioni
Descrizioni di Infineon IRF2204SPBF fornite dai suoi distributori.
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 40 V 3.6 mOhm 200 nC Surface Mount HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 40V, 170A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:170A; Resistance, Rds On:0.0036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; ;RoHS Compliant: Yes
MOSFET, N, 40V, 170A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:170A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3.6mohm; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:850A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.6V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +46.93%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating170 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance3.6 mΩ
Package Quantity1000
Power Dissipation200 W
Rds On Max3.6 mΩ
Resistance3.6 mΩ
Rise Time140 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time62 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)40 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità