Diodes Inc. ZXMP6A17DN8TA
$ 0.603
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | ZXMP6A17DN8CT-ND | 2223 | 1 | Cut Tape | ||||||||
| Avnet | ZXMP6A17DN8TA | 0 | 500 | 7h | ||||||||
| RS (Formerly Allied Electronics) | ZXMP6A17DN8TA | 0 | 5 | Bulk | 22h | |||||||
| Future Electronics | ZXMP6A17DN8TA | 0 | 500 | Tape & Reel | ||||||||
| Arrow Electronics | ZXMP6A17DN8TA | 0 | 500 |
Cronologia dell'inventario
Tendenza a 3 mesi: -48.48%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRF7342TRPBF
MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20
Descrizioni
Descrizioni di Diodes Inc. ZXMP6A17DN8TA fornite dai suoi distributori.
Dual P-Channel 60 V 0.125 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
Trans MOSFET P-CH 60V 3.42A Automotive 8-Pin SOIC T/R
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
Diodes Inc SCT
2.15W 20V 1V@ 250¦ÌA (Min) 17.7nC@ 10V 2P 60V 125m¦¸@ 2.3A,10V 2.7A 637pF@30V SOIC-8 5mm*4mm*1.5mm
MOSFET DUAL P-CHANNEL 20V 3.2A SOIC8
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.125ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, PP CH, 60V, 3.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.4A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-3.2A; Drain Source Voltage Vds, P Channel:-60V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.125ohm
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -48.48%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)2.3 A
Current Rating-3.1 A
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationDual
Fall Time11.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance637 pF
Max Operating Temperature150 °C
Max Power Dissipation2.15 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Rds On Max125 mΩ
Resistance125 mΩ
Rise Time3.4 ns
Schedule B8541290080
Turn-Off Delay Time26.2 ns
Turn-On Delay Time2.6 ns
Voltage Rating (DC)-60 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità