Infineon IRF7342PBF

Transistor MOSFET P Channel 55 Volt 3.4 Amp 8 Pin SOIC

Transistor: 2xP-MOSFET; unipolar; -55V; -3.4A; 0.105ohm; 2W; -55+150 deg.C; SMD; SO8

HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω) | MOSFET 2P-CH 55V 3.4A 8-SOIC

Dual P-Channel 55 V 0.105 Ohm 26 nC HEXFET® Power Mosfet - SOIC-8

Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC Tube

Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:55V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:690pF; Current Id Max:-3.4A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Rate of Voltage Change dv / dt:5V/ns; Row Pitch:6.3mm; SMD Marking:F7342; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Min:-1V