Vishay SUD23N06-31L-E3
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | SUD23N06-31L-E3 | 0 | 1 | Custom Reel | 22h | |||||||
| element14 APAC | SUD23N06-31L-E3 | 0 | 1 | Tape & Reel | 10h | |||||||
| Win Source | WS-SUD23N06-31L-E3 | 19 | 15 | 21h | ||||||||
| Aztech | SUD23N06-31L-E3 | 10 367 | 16h | |||||||||
| Fly-Wing Technology | SUD23N06-31L-E3 | 46 409 | 2d |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 0.467
Stock
59,295
450,941
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
23 A
9.1 A
Threshold Voltage
2 V
3 V
Rds On Max
31 mΩ
31 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
100 W
5.7 W
Input Capacitance
670 pF
670 pF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Pièces détachées
InfineonIPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
STMicroelectronicsSTD20NF06LT4
Trans MOSFET N-CH 60V 24A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 24A DPAK
STMicroelectronicsSTD30NF06LT4
N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
Descriptions
Descriptions de Vishay SUD23N06-31L-E3 fournies par ses distributeurs.
SUD23N06-31L-E3 N-channel MOSFET Transistor,23 A,60 V,3-Pin TO-252
Single N-Channel 60 V 0.031 Ohm 100 W Surface Mount Power Mosfet - TO-252-3
Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:23A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: Yes
MOSFET, N REEL 2K; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:60V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:D-PAK; Current Id Max:23A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance @ Vgs = 4.5V:45mohm; On State resistance @ Vgs = 10V:31mohm; Package / Case:DPAK; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:50A; Reel Quantity:2000; SMD Marking:SUD23N06-31L; Tape Width:16mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Alias du fabricant
Vishay possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Vishay peut également être connu sous les noms suivants :
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance670 pF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation100 W
Rds On Max31 mΩ
Resistance31 mΩ
Rise Time15 ns
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time8 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité