STMicroelectronics STW43NM60N

N-channel 600V - 0.075Y - 35A - TO-247 second generation MDmesh™ Power MOSFET
$ 8.15
Obsolete
Page du fabricantFiche technique

Prix et stock

Voir tous les prix
DistributorSKUMinPkg
RS (Formerly Allied Electronics)STW43NM60N010Bulk
15h
FarnellSTW43NM60N01
2h
Microchip USASTW43NM60N399300Tray
18h
Win SourceWS-STW43NM60N26 40011
2h
Worldway ElectronicsSTW43NM60N15 3097Tube
42m

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour STMicroelectronics STW43NM60N.

IHS

Datasheet12 pagesIl y a 19 ans

Newark

Components Direct

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Pièces de rechange

Ce composant
Pièces de rechange
STMicroelectronicsSTW43NM60N
STMicroelectronicsSTW40N60M2
Price @ 1000
$ 8.15
$ 2.258
Stock
152,778
240,048
Authorized Distributors
2
6
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
35 A
34 A
Threshold Voltage
-
-
Rds On Max
88 mΩ
88 mΩ
Gate to Source Voltage (Vgs)
30 V
25 V
Power Dissipation
255 W
-
Input Capacitance
4.2 nF
2.5 nF

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-29
LTD Date2018-12-29

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N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 package
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N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
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InfineonIPW60R099P6XKSA1
MOSFET N-CH 600V 37.9A TO247-3 / N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3
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InfineonIPW65R080CFDAFKSA1
Power MOSFET, AEC-Q101, N Channel, 650 V, 43.3 A, 0.072 ohm, TO-247, Through Hole
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Descriptions

Descriptions de STMicroelectronics STW43NM60N fournies par ses distributeurs.

N-channel 600V - 0.075Y - 35A - TO-247 second generation MDmesh™ Power MOSFET
STMicroelectronics
MOSFET Transistor, N Channel, 17.5 A, 600 V, 75 mohm, 10 V, 3 V
Newark
N-CHANNEL 600 V-0.075 OHM-35 A-TO-247 SECOND GENERATION MDMESH POWER MOSFET Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
ComSIT Distribution GmbH
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:35A; Package / Case:TO-247; Power Dissipation Pd:255W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
element14 APAC

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