onsemi MUN5213DW1T1G
$ 0.064
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5213DW1T1G | 3 000 | 30K | 2d | ||||||||
| Newark | MUN5213DW1T1G | 19 643 | 5 | Cut Tape | ||||||||
| Verical | MUN5213DW1T1G | 4 595 | 447 | |||||||||
| Arrow Electronics | MUN5213DW1T1G | 4 595 | 1 | |||||||||
| DigiKey | MUN5213DW1T1GOSCT-ND | 58 327 | 1 | Cut Tape |
Historique des stocks
Tendance sur 3 mois : +160%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MUN5213DW1T1G.
Modèles CAO
Téléchargez les symboles onsemi MUN5213DW1T1G, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
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 SnapEDA | Empreinte | Télécharger |
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Ce composant
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Price @ 1000
$ 0.064
$ 0.055
Stock
5,559,566
2,176,205
Authorized Distributors
6
3
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
80
80
Power Dissipation
256 mW
187 mW
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-11-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
onsemiMUN5214DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
onsemiMUN5235DW1T1G
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R / TRANS 2NPN PREBIAS 0.25W SOT363
Descriptions
Descriptions de onsemi MUN5213DW1T1G fournies par ses distributeurs.
Bipolar Transistors (BJT); MUN5213DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA
DUAL NPN BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
MUN Series 50 V 100 mA 47 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
MUN5213DW1T1G NPN DIGI TRANSISTOR, 100MA 50 V 47 KOHM, RATIO OF 1, 6-PIN SC-88
250mV@ 300¦ÌA,10mA 2 NPN - Pre-Biased (Dual) 385mW 5V 500nA 50V 50V 100mA 2mm*1.25mm*1.1mm
2 NPN pre-biased (Dual) 187mW 100mA 50V SC-70-6(SOT-363) Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
Bipolar Pre-Biased/Digital Transistor, 50 V, 100 Ma, 47 Kohm, 47 Kohm, 1, Sot-363 Rohs Compliant: Yes |Onsemi MUN5213DW1T1G
BRT TRANSISTOR, 50V, 47K/47KOHM, SC88; C; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47koh
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +160%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation256 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MUN5213DW1T1G.
Conformité
Classification environnementale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité