onsemi KSE13003H2ASTU

Bipolar (BJT) Single Transistor, NPN, 400 V, 4 MHz, 20 W, 1.5 A, 14
$ 0.714
Production
Page du fabricantFiche technique

Prix et stock

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DistributorSKUMinPkg
NewarkKSE13003H2ASTU01920
AvnetKSE13003H2ASTU02084
1d
FarnellKSE13003H2ASTU01920
7h
Mouser512-KSE13003H2ASTU5351Tube
Microchip USAKSE13003H2ASTU342600Tube
14h

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi KSE13003H2ASTU.

IHS

Datasheet4 pagesIl y a 18 ans

TME

onsemi

element14 APAC

Fairchild Semiconductor

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Pièces de rechange

Ce composant
Pièces de rechange
onsemiKSE13003H2ASTU
onsemiFJE3303H2TU
Price @ 1000
$ 0.714
$ 0.461
Stock
167,054
296,096
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-126
TO-126-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
400 V
400 V
Max Collector Current
1.5 A
1.5 A
Transition Frequency
4 MHz
4 MHz
Collector Emitter Saturation Voltage
500 mV
3 V
hFE Min
14
14
Power Dissipation
20 W
20 W

Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 4 days ago)

Pièces détachées

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Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3
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Tube Through Hole NPN Single Bipolar (BJT) Transistor 8 @ 500mA 2V 1.5A 20W 4MHz
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onsemiFJE3303H2TU
Transistor, bjt, npn,400V V(Br)Ceo,1.5A I(C),to-126 Rohs Compliant: Yes |Onsemi FJE3303H2TU
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Diodes Inc.APT13003DU-G1
Small Signal Bipolar Transistor, 1.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
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onsemiFJE5304D
Transistor, bjt, npn,400V V(Br)Ceo,4A I(C),to-126 Rohs Compliant: Yes |Onsemi FJE5304D
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Tube Through Hole NPN Bipolar (BJT) Transistor 40 @ 40mA 20V 100mA 4W 100MHz
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Descriptions

Descriptions de onsemi KSE13003H2ASTU fournies par ses distributeurs.

Bipolar (BJT) Single Transistor, NPN, 400 V, 4 MHz, 20 W, 1.5 A, 14
Newark
NPN 400 V 1.5 A 20 W Flange Mount Silicon Transistor - TO-126
Future Electronics
Trans GP BJT NPN 400V 1.5A 20000mW 3-Pin(3+Tab) TO-126 Tube
Verical
Transistor GP BJT NPN 400V 1.5A TO126
RS APAC
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
IHS
TRANSISTOR, BIPOL, NPN, 400V, TO-225AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 20W; DC Collector Current: 1.5A; DC Current Gain hFE: 14hFE; Tr
Farnell

Images

Augswan
element14 APAC
iiiC
Future Electronics
LZChips
Rochester Electronics

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