onsemi FQB7P20TM_F085

Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R
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IHS

Datasheet7 pagesIl y a 25 ans

Fairchild Semiconductor

Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-01
LTD Date2023-03-31

Pièces détachées

STMicroelectronicsSTB11N52K3
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
N-Channel Power MOSFET, QFET®, 500 V, 9 A, 800 mΩ, D2PAK
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
P-Channel Power MOSFET, QFET®, -60 V, -27 A, 70 mΩ, D2PAK
Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-263 (D2PAK), Surface Mount

Descriptions

Descriptions de onsemi FQB7P20TM_F085 fournies par ses distributeurs.

Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R
MOSFET, P CH, -200V, -7.3A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.3A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:90W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
These P-Channel enchancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Technology.This advanced Technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. These devices are well suited for high efficiency switching DC/DC converters.

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