onsemi FDB2614
$ 3
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : -100%
Modèles CAO
0 models available
Pièces de rechange
0 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDB2614.
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-12-12
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
VishaySUM65N20-30-E3
SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3
InfineonIPB200N25N3GATMA1
MOSFET N-CH 250V 64A D2PAK N-Channel 250 V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3
InfineonIPB108N15N3GATMA1
MOSFET N-CH 150V 83A D2PAK N-Channel 150 V 83A (Tc) 214W (Tc) Surface Mount PG-TO263-3
Descriptions
Descriptions de onsemi FDB2614 fournies par ses distributeurs.
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):22.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:D2-PAK; Power Dissipation Pd:260W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -100%
Modèles CAO
0 models available
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)62 A
Current Rating62 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time162 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.23 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation260 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation260 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time284 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time103 ns
Turn-On Delay Time77 ns
Voltage Rating (DC)200 V
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDB2614.
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Déclarations de conformité