Descriptions de onsemi FCB20N60FTM fournies par ses distributeurs.
N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK
Power MOSFET, N Channel, 600 V, 20 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns