onsemi 2N7000-D26Z
$ 0.161
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 2N7000-D26Z | 4 000 | 2K | 2d | ||||||||
| Newark | 2N7000-D26Z | 1 831 | 1 | Cut Tape | ||||||||
| Verical | 2N7000_D26Z | 4 000 | 2K | |||||||||
| Arrow Electronics | 2N7000-D26Z | 4 955 | 1 | |||||||||
| Future Electronics | 2N7000-D26Z | 42 000 | 2K | Tape & Reel |
Historique des stocks
Tendance sur 3 mois : +61.64%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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Modèles CAO
Téléchargez les symboles onsemi 2N7000-D26Z, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
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 EE Concierge | SymboleEmpreinte |
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Price @ 1000
$ 0.161
$ 0.124
$ 0.124
Stock
1,090,616
2,079,971
2,079,971
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
200 mA
200 mA
200 mA
Threshold Voltage
2.1 V
2.1 V
2.1 V
Rds On Max
2 Ω
5 Ω
5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
400 mW
350 mW
350 mW
Input Capacitance
50 pF
40 pF
40 pF
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions de onsemi 2N7000-D26Z fournies par ses distributeurs.
2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3
N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
ON SEMICONDUCTOR - 2N7000-D26Z - MOSFET, N CH, 60V, 0.2A, TO-92
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, N CH, 60V, 0.2A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:400mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:200mA; Package / Case:TO-92; Power Dissipation Pd:400mW; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +61.64%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation400 mW
Rds On Max2 Ω
Resistance5 Ω
Schedule B8541210080
TerminationThrough Hole
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Length6.35 mm
Width6.35 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité