Infineon IRFS7530PBF
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 1.548
Stock
61,627
431,363
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
2 mΩ
2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.703 nF
13.703 nF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Pièces détachées
InfineonIRFS7534PBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
InfineonAUIRLS3036TRL
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
InfineonAUIRLS3036
MOSFET, N-CH, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
Descriptions
Descriptions de Infineon IRFS7530PBF fournies par ses distributeurs.
N Channel 60 V 2 mO 375 W Surface Mount HexFet Power MosFet - D2PAK
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 295A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time104 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.703 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time141 ns
Threshold Voltage3.7 V
Turn-Off Delay Time172 ns
Turn-On Delay Time52 ns
Dimensions
Height5.084 mm
Conformité
Classification environnementale
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Déclarations de conformité