Infineon IRFR3411PBF
$ 1.64
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFR3411PBF | 0 | 825 | Bulk | 11h | |||||||
| Farnell | IRFR3411PBF | 0 | 5 | 18h | ||||||||
| Win Source | WS-IRFR3411PBF | 20 000 | 75 | 20h | ||||||||
| Worldway Electronics | IRFR3411PBF | 17 802 | 7 | Tube | 18h | |||||||
| GreenTree Electronics | IRFR3411PBF | 883 | 3d |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Pièces détachées
InfineonIRFR3410TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
InfineonIRFR3410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
InfineonIRFR3411TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 36Milliohms;ID 32A;D-Pak (TO-252AA);-55deg
STMicroelectronicsSTD25N10F7
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package
onsemiNVD6495NLT4G
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
Descriptions
Descriptions de Infineon IRFR3411PBF fournies par ses distributeurs.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 36Milliohms;ID 32A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 44 mOhm 48 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 100V, 32A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)32 A
Current Rating32 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance44 mΩ
Package Quantity3000
Power Dissipation130 W
Rds On Max44 mΩ
Recovery Time170 ns
Resistance44 MΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height2.26 mm
Length6.7056 mm
Width6.22 mm
Conformité
Classification environnementale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité