Infineon IRF7469PBF
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7469PBF | 0 | 3800 | Bulk | 15h | |||||||
| Farnell | IRF7469PBF | 0 | 5 | 22h | ||||||||
| Win Source | WS-604606 | 11 153 | 45 | 23h | ||||||||
| Worldway Electronics | IRF7469PBF | 10 966 | 7 | Tube | 22h | |||||||
| ICPartonline | IRF7469PBF | 15 358 | 1d |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Pièces détachées
InfineonIRF7469TRPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7240PBF
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 0.015Ohm;ID -10.5A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7811AVPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
Descriptions
Descriptions de Infineon IRF7469PBF fournies par ses distributeurs.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 40 V 17 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:73A; Row Pitch:6.3mm; SMD Marking:IRF7469PBF; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance17 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max17 mΩ
Rise Time2.2 ns
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)40 V
Dimensions
Height1.75 mm
Length5 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité