Infineon IPW65R080CFDFKSA1

Power MOSFET, N Channel, 700 V, 43.3 A, 0.072 ohm, TO-247, Through Hole

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

391W(Tc) 20V 4.5V@1.76mA 170nC@ 10 V 1individualNChannel 700V 80mΩ@ 17.6A,10V 43.3A 5.03nF@100V TO-247 Through hole mounting 16.13mm*5.21mm*21.1mm

MOSFET, N-CH, 700V, 43.3A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.072o; Available until stocks are exhausted Alternatives available

Mosfet, N Channel, 700V, 43.3A, To247; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:43.3A; Tensión Drenaje-Fuente Vds:700V; Resistencia De Activación Rds(On):0.072Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon IPW65R080CFDFKSA1

650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility