Infineon IPD60R520CPATMA1

Trans Mosfet N-ch 600V 6.8A 3-PIN TO-252 T/r
Obsolete
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour Infineon IPD60R520CPATMA1.

Infineon

Datasheet10 pagesIl y a 15 ans

IHS

Chaîne d'approvisionnement

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Pièces détachées

Trans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252
Single N-Channel 650 V 600 mOhm 21 nC SIPMOS® Power Mosfet - TO-252-3
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) DPAK T/R
E Series N-Channel 650 V 78 W 0.6 O 48 nC Surface Mount Power Mosfet - DPAK
STMicroelectronicsSTD11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package

Descriptions

Descriptions de Infineon IPD60R520CPATMA1 fournies par ses distributeurs.

Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R
Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
COOLMOS N-CHANNEL POWER MOSFET
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

Alias du fabricant

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  • INFINEON TECHNOLOGIES (ASIA