Infineon AUIRFS3207Z
$ 1.74
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRFS3207Z | 100 | 21h | |||||||||
| RS (Formerly Allied Electronics) | AUIRFS3207Z | 0 | 3K | Bulk | 10h | |||||||
| Win Source | WS-AUIRFS3207Z | 2 180 | 2 | 22h | ||||||||
| Worldway Electronics | AUIRFS3207Z | 12 871 | 7 | Tube | 21h | |||||||
| UnikeyIC | AUIRFS3207Z | 95 | 61 | Tube | 3h |
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 1.74
$ 1.537
$ 1.537
Stock
46,897
277,024
277,024
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
120 A
75 A
75 A
Threshold Voltage
2 V
4 V
4 V
Rds On Max
4.1 mΩ
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 W
300 W
300 W
Input Capacitance
6.92 nF
7.6 nF
7.6 nF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Pièces détachées
InfineonIRFS3207ZTRRPBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
VishaySQM120N06-3M5L_GE3
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
STMicroelectronicsSTH140N8F7-2
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
VishaySQM110N05-06L_GE3
SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
Descriptions
Descriptions de Infineon AUIRFS3207Z fournies par ses distributeurs.
Transistor MOSFET N-ch 75V 120A D2PAK
Trans MOSFET N-CH 75V 170A Automotive 3-Pin(2+Tab) D2PAK Tube
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
Infineon SCT
MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)75 V
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.92 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity1000
Power Dissipation300 W
Rds On Max4.1 mΩ
Rise Time68 ns
Threshold Voltage2 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité