onsemi RFD16N05LSM

N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

50V,16A,0.047 ohm, LOGIC LEVEL NCH POWER MOSFET

16A, 50V, 0.047 OHM, LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:50V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:16A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:45A; SMD Marking:RFD16N05LSM; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.