onsemi FDD3N40TM
$ 0.366
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +103%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
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 EE Concierge | SímboloFootprint | ||
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Price @ 1000
$ 0.366
$ 0.263
Stock
678,479
91,638
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
400 V
400 V
Continuous Drain Current (ID)
2 A
2.1 A
Threshold Voltage
5 V
-
Rds On Max
3.4 Ω
3.4 Ω
Gate to Source Voltage (Vgs)
30 V
-
Power Dissipation
30 W
-
Input Capacitance
225 pF
140 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-02-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDD3N40TM suministradas por sus distribuidores.
N-Channel Power MOSFET, UniFETTM, 400V, 2A, 3.4Ω, DPAK
N-Channel 400 V 3.4 Ohm Surface Mount UniFET Mosfet - TO-252-3
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N TO-252 SMD; Transistor Polarity:N; Current, Id Cont:2A; Resistance, Rds On:3.4ohm; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:8A; No. of Pins:2; Power Dissipation:30mW; Voltage, Vds Max:400V
MOSFET, N TO-252 SMD; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:400V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +103%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance225 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation30 W
Rds On Max3.4 Ω
Resistance3.4 Ω
Rise Time30 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento